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| Untersuchte Arbeit: Seite: 52, Zeilen: 2-8 |
Quelle: Tinte and Stachiotti 2000 Seite(n): 273, Zeilen: 19ff. |
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| In recent years, a large amount of research worldwide was focused on the growth and characterization of ferroelectric thin films. On one hand, their ferroelectric, dielectric, and piezoelectric properties were found to be promising for microelectronic and micromechanical applications [85]. On the other hand, the physical properties of ferroelectric thin films were found to be substantially different from those of bulk materials. The ferroelectric properties are known to degrade in thin films [86], and it is very important to understand the origin of this effect.
[85] J.F.Scott. Ferroelectrics, 183:51, 1996. [86] Feng Tsai and J. M. Cowley. Thickness dependence of ferroelectric domains in thin crystalline films. Applied Physics Letters, 65(15):1906–1908, 1994. |
In recent years, a large amount of research, worldwide was focused on the growth and characterization of ferroelectric thin films. On one hand, their ferroelectric, dielectric, and piezoelectric properties were found to be promising for microelectronic and micromechanical applications [1]. On the other hand, the physical properties of ferroelectric thin films were found to be substantially different from those of bulk materials. The ferroelectric properties are known to degrade in thin films [2], and it is very important to understand the origin of this effect.
1. J.F.Scott, Ferroelectrlcs 183, 51 (1996). 2. F.Tsai and M.Cowley, Appl.Phys.Lett. 65, 1906 (1994). |
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